DMTH12H007SPS-13
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 101V~250V POWERDI5
$0.66
Available to order
Reference Price (USD)
1+
$0.65650
500+
$0.649935
1000+
$0.64337
1500+
$0.636805
2000+
$0.63024
2500+
$0.623675
Exquisite packaging
Discount
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Boost your electronic applications with DMTH12H007SPS-13, a reliable Transistors - FETs, MOSFETs - Single by Diodes Incorporated. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, DMTH12H007SPS-13 meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 120 V
- Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 8.9mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3142 pF @ 60 V
- FET Feature: -
- Power Dissipation (Max): 3.5W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerDI5060-8
- Package / Case: 8-PowerTDFN
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