RF1S25N06SM9A
Harris Corporation
Harris Corporation
N-CHANNEL POWER MOSFET
$0.63
Available to order
Reference Price (USD)
1+
$0.63000
500+
$0.6237
1000+
$0.6174
1500+
$0.6111
2000+
$0.6048
2500+
$0.5985
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your electronic designs with RF1S25N06SM9A by Harris Corporation, a top-tier choice in Discrete Semiconductor Products. Specifically crafted for Transistors - FETs, MOSFETs - Single applications, this product offers superior power handling and energy efficiency. Key features include high voltage tolerance, minimal power loss, and robust durability, making it perfect for switching and amplification tasks. Whether for industrial machinery, renewable energy systems, or portable devices, RF1S25N06SM9A ensures reliable operation. Ready to integrate this component into your project? Submit an inquiry now for pricing and availability!
Specifications
- Product Status: Active
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): -
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
Related Products
Vishay Siliconix
SIS4604DN-T1-GE3
Renesas Electronics America Inc
2SK1852-T-AZ
Vishay Siliconix
SIHD14N60ET1-GE3
onsemi
NTB7D3N15MC
Infineon Technologies
IPT65R125CFD7XTMA1
Infineon Technologies
IMBG65R072M1HXTMA1
Fairchild Semiconductor
FDMS0355S
Diodes Incorporated
DMTH6009SPS-13
onsemi
NTH4L060N090SC1
Renesas Electronics America Inc