NTB7D3N15MC
onsemi
onsemi
NTB7D3N15MC
$3.68
Available to order
Reference Price (USD)
1+
$3.68000
500+
$3.6432
1000+
$3.6064
1500+
$3.5696
2000+
$3.5328
2500+
$3.496
Exquisite packaging
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose NTB7D3N15MC by onsemi. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with NTB7D3N15MC inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150 V
- Current - Continuous Drain (Id) @ 25°C: 15.2A (Ta), 101A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
- Rds On (Max) @ Id, Vgs: 7.3mOhm @ 62A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 342µA
- Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 4250 pF @ 75 V
- FET Feature: -
- Power Dissipation (Max): 3.75W (Ta), 166W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D²PAK-3 (TO-263-3)
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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