IXTP120N20X4
IXYS
IXYS
MOSFET
$8.41
Available to order
Reference Price (USD)
1+
$8.41000
500+
$8.3259
1000+
$8.2418
1500+
$8.1577
2000+
$8.0736
2500+
$7.9895
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose IXTP120N20X4 by IXYS. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with IXTP120N20X4 inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 9.5mOhm @ 60A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 417W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220 (IXTP)
- Package / Case: TO-220-3
Related Products
Microchip Technology
APTM20DAM04G
IXYS
IXTY1N100P-TRL
Diodes Incorporated
DMJ65H650SCTI
Harris Corporation
RFM12P08
Renesas Electronics America Inc
RJK0348DPA-WS#J0
Diodes Incorporated
DMTH32M5LPSQ-13
NXP USA Inc.
PHM10030DLS115
Renesas Electronics America Inc
2SK2158-T2B-AT
Vishay Siliconix
IRL510PBF-BE3
Diodes Incorporated