DMJ65H650SCTI
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 650V 10A ITO220AB
$1.80
Available to order
Reference Price (USD)
1+
$1.79680
500+
$1.778832
1000+
$1.760864
1500+
$1.742896
2000+
$1.724928
2500+
$1.70696
Exquisite packaging
Discount
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Boost your electronic applications with DMJ65H650SCTI, a reliable Transistors - FETs, MOSFETs - Single by Diodes Incorporated. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, DMJ65H650SCTI meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 600mOhm @ 2.4A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12.9 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 639 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 31W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: ITO-220AB (Type TH)
- Package / Case: TO-220-3 Full Pack, Isolated Tab
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