DMT6009LJ3
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 60V 74.5A TO251
$0.61
Available to order
Reference Price (USD)
1+
$0.61040
500+
$0.604296
1000+
$0.598192
1500+
$0.592088
2000+
$0.585984
2500+
$0.57988
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Diodes Incorporated presents DMT6009LJ3, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, DMT6009LJ3 delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 74.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 10mOhm @ 13.5A, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 10 V
- Vgs (Max): ±16V
- Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 2.9W (Ta), 83.3W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-251 (Type TH)
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Related Products
Diodes Incorporated
DMT3004LPS-13
onsemi
STD4815NT4G
Diodes Incorporated
DMP3045LFVW-7
IXYS
IXTT170N10P-TR
Diodes Incorporated
DMTH6016LFVWQ-7-A
Toshiba Semiconductor and Storage
TK22V65X5,LQ
Diodes Incorporated
DMP3008SFG-13
Diodes Incorporated
DMN2027UPS-13
Harris Corporation
IRF643
SemiQ