GCMX080B120S1-E1
SemiQ
SemiQ
SIC 1200V 80M MOSFET SOT-227
$23.32
Available to order
Reference Price (USD)
1+
$23.32000
500+
$23.0868
1000+
$22.8536
1500+
$22.6204
2000+
$22.3872
2500+
$22.154
Exquisite packaging
Discount
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SemiQ presents GCMX080B120S1-E1, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, GCMX080B120S1-E1 delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 20V
- Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V
- Vgs(th) (Max) @ Id: 4V @ 10mA
- Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 20 V
- Vgs (Max): +25V, -10V
- Input Capacitance (Ciss) (Max) @ Vds: 1336 pF @ 1000 V
- FET Feature: -
- Power Dissipation (Max): 142W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SOT-227
- Package / Case: SOT-227-4, miniBLOC
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