IXTT170N10P-TR
IXYS
IXYS
MOSFET N-CH 100V 170A TO268
$8.90
Available to order
Reference Price (USD)
1+
$8.89703
500+
$8.8080597
1000+
$8.7190894
1500+
$8.6301191
2000+
$8.5411488
2500+
$8.4521785
Exquisite packaging
Discount
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Discover high-performance IXTT170N10P-TR from IXYS, a leading solution in the Discrete Semiconductor Products category. Our Transistors - FETs, MOSFETs - Single are designed for efficiency and reliability, making them ideal for various electronic applications. These components feature low on-resistance, fast switching speeds, and excellent thermal performance, ensuring optimal functionality in power management and amplification circuits. Commonly used in automotive, industrial, and consumer electronics, IXTT170N10P-TR delivers consistent performance under demanding conditions. Interested in learning more? Contact us today for a detailed quote and technical support!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
- Rds On (Max) @ Id, Vgs: 9mOhm @ 85A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 198 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 715W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-268
- Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
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