DMP1055USW-7
Diodes Incorporated
Diodes Incorporated
MOSFET P-CH 12V 3.8A SOT363
$0.12
Available to order
Reference Price (USD)
3,000+
$0.12916
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover high-performance DMP1055USW-7 from Diodes Incorporated, a leading solution in the Discrete Semiconductor Products category. Our Transistors - FETs, MOSFETs - Single are designed for efficiency and reliability, making them ideal for various electronic applications. These components feature low on-resistance, fast switching speeds, and excellent thermal performance, ensuring optimal functionality in power management and amplification circuits. Commonly used in automotive, industrial, and consumer electronics, DMP1055USW-7 delivers consistent performance under demanding conditions. Interested in learning more? Contact us today for a detailed quote and technical support!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 12 V
- Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 48mOhm @ 3A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 1028 pF @ 6 V
- FET Feature: -
- Power Dissipation (Max): 660mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-363
- Package / Case: 6-TSSOP, SC-88, SOT-363
Related Products
Texas Instruments
CSD17576Q5BT
Taiwan Semiconductor Corporation
TSM7N90CI C0G
Nexperia USA Inc.
BUK7Y3R0-40HX
Vishay Siliconix
SQS486CENW-T1_GE3
Vishay Siliconix
SQM60030E_GE3
Toshiba Semiconductor and Storage
TK13A50D(STA4,Q,M)
Vishay Siliconix
SQD100N03-3M2L_GE3
Vishay Siliconix
SIHG100N60E-GE3
Vishay Siliconix
SIA429DJT-T1-GE3
Renesas Electronics America Inc