UPA2815T1S-E2-AT
Renesas Electronics America Inc
Renesas Electronics America Inc
MOSFET P-CH 30V 21A 8HWSON
$0.52
Available to order
Reference Price (USD)
5,000+
$0.43190
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover high-performance UPA2815T1S-E2-AT from Renesas Electronics America Inc, a leading solution in the Discrete Semiconductor Products category. Our Transistors - FETs, MOSFETs - Single are designed for efficiency and reliability, making them ideal for various electronic applications. These components feature low on-resistance, fast switching speeds, and excellent thermal performance, ensuring optimal functionality in power management and amplification circuits. Commonly used in automotive, industrial, and consumer electronics, UPA2815T1S-E2-AT delivers consistent performance under demanding conditions. Interested in learning more? Contact us today for a detailed quote and technical support!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 11mOhm @ 21A, 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1760 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 1.5W (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-HWSON (3.3x3.3)
- Package / Case: 8-PowerWDFN
Related Products
onsemi
NTMFS5C404NLTT3G
onsemi
FQB27P06TM
Nexperia USA Inc.
BUK7M9R5-40HX
Rohm Semiconductor
R6511ENJTL
Diodes Incorporated
DMP2040USS-13
Toshiba Semiconductor and Storage
SSM3H137TU,LF
Nexperia USA Inc.
BSP220,115
Infineon Technologies
IRL60SL216
Nexperia USA Inc.
NX3008PBK,215
Infineon Technologies