SQD100N03-3M2L_GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 30V 100A TO252AA
$1.96
Available to order
Reference Price (USD)
2,000+
$0.74250
6,000+
$0.71500
10,000+
$0.70000
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience the power of SQD100N03-3M2L_GE3, a premium Transistors - FETs, MOSFETs - Single from Vishay Siliconix. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, SQD100N03-3M2L_GE3 is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 3.2mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 6316 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 136W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252AA
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
Vishay Siliconix
SIHG100N60E-GE3
Vishay Siliconix
SIA429DJT-T1-GE3
Renesas Electronics America Inc
UPA2815T1S-E2-AT
onsemi
NTMFS5C404NLTT3G
onsemi
FQB27P06TM
Nexperia USA Inc.
BUK7M9R5-40HX
Rohm Semiconductor
R6511ENJTL
Diodes Incorporated
DMP2040USS-13
Toshiba Semiconductor and Storage
SSM3H137TU,LF
Nexperia USA Inc.