PJF18N20_T0_00001
Panjit International Inc.
Panjit International Inc.
200V N-CHANNEL ENHANCEMENT MODE
$1.05
Available to order
Reference Price (USD)
1+
$1.05000
500+
$1.0395
1000+
$1.029
1500+
$1.0185
2000+
$1.008
2500+
$0.9975
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Boost your electronic applications with PJF18N20_T0_00001, a reliable Transistors - FETs, MOSFETs - Single by Panjit International Inc.. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, PJF18N20_T0_00001 meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 160mOhm @ 9A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1017 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 50W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: ITO-220AB
- Package / Case: TO-220-3 Full Pack
Related Products
onsemi
NTHL095N65S3H
Vishay Siliconix
IRF840APBF
IXYS
IXFH16N80P
Infineon Technologies
BSC011N03LSATMA1
Fairchild Semiconductor
FQD6N60CTM
Diodes Incorporated
DI9952T
Infineon Technologies
IPW65R190E6
STMicroelectronics
SCTW35N65G2V
Infineon Technologies
IRLR7833TRLPBF
onsemi