DMN11M2UCA14-7
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 8V~24V X2-TSN3027-
$0.43
Available to order
Reference Price (USD)
1+
$0.43135
500+
$0.4270365
1000+
$0.422723
1500+
$0.4184095
2000+
$0.414096
2500+
$0.4097825
Exquisite packaging
Discount
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Discover high-performance DMN11M2UCA14-7 from Diodes Incorporated, a leading solution in the Discrete Semiconductor Products category for Transistors - FETs, MOSFETs - Arrays. These components are designed for efficiency and reliability, making them ideal for various electronic applications. Features include low power consumption, high switching speed, and excellent thermal stability. Perfect for power management, amplification, and switching circuits. Contact us today for a quote and let Diodes Incorporated s DMN11M2UCA14-7 enhance your projects with superior quality and performance.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual) Common Source
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 12V
- Current - Continuous Drain (Id) @ 25°C: 34A (Ta)
- Rds On (Max) @ Id, Vgs: 1.85mOhm @ 9.8A, 4.5V
- Vgs(th) (Max) @ Id: 1.4V @ 870µA
- Gate Charge (Qg) (Max) @ Vgs: 71nC @ 4V
- Input Capacitance (Ciss) (Max) @ Vds: 6083pF @ 6V
- Power - Max: 950mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 14-SMD, No Lead
- Supplier Device Package: X2-TSN3027-14
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