SQJ912DEP-T1_GE3
Vishay Siliconix
Vishay Siliconix
AUTOMOTIVE DUAL N-CHANNEL 40 V (
$1.10
Available to order
Reference Price (USD)
1+
$1.10000
500+
$1.089
1000+
$1.078
1500+
$1.067
2000+
$1.056
2500+
$1.045
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The SQJ912DEP-T1_GE3 from Vishay Siliconix is a premium option in the Discrete Semiconductor Products category, specializing in Transistors - FETs, MOSFETs - Arrays. With advanced features such as high-frequency operation, low leakage current, and excellent ESD protection, these components are perfect for demanding electronic applications. Whether you re working on telecommunications, computing, or medical devices, SQJ912DEP-T1_GE3 offers the reliability you need. Contact us now to discuss how we can support your project requirements with Vishay Siliconix s cutting-edge solutions.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
- Rds On (Max) @ Id, Vgs: 7.3mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 27W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: PowerPAK® SO-8 Dual
- Supplier Device Package: PowerPAK® SO-8 Dual
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