DMN1001UCA10-7
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 8V~24V X2-TSN1820-
$0.35
Available to order
Reference Price (USD)
1+
$0.35441
500+
$0.3508659
1000+
$0.3473218
1500+
$0.3437777
2000+
$0.3402336
2500+
$0.3366895
Exquisite packaging
Discount
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The DMN1001UCA10-7 by Diodes Incorporated is a must-have in the Discrete Semiconductor Products category, specifically for Transistors - FETs, MOSFETs - Arrays. Designed for high-performance applications, these components feature low RDS(on), high power density, and excellent reliability. They are widely used in automotive, aerospace, and industrial electronics. Let Diodes Incorporated s DMN1001UCA10-7 be the backbone of your next project contact us for more information and to place your order.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual) Common Drain
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 12V
- Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
- Rds On (Max) @ Id, Vgs: 3.55mOhm @ 5A, 4.5V
- Vgs(th) (Max) @ Id: 1.4V @ 870µA
- Gate Charge (Qg) (Max) @ Vgs: 29nC @ 4V
- Input Capacitance (Ciss) (Max) @ Vds: 2865pF @ 6V
- Power - Max: 1W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 10-SMD, No Lead
- Supplier Device Package: X2-TSN1820-10
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