DMJ70H1D4SJ3
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 651V~800V TO251 TU
$1.17
Available to order
Reference Price (USD)
1+
$1.17253
500+
$1.1608047
1000+
$1.1490794
1500+
$1.1373541
2000+
$1.1256288
2500+
$1.1139035
Exquisite packaging
Discount
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Boost your electronic applications with DMJ70H1D4SJ3, a reliable Transistors - FETs, MOSFETs - Single by Diodes Incorporated. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, DMJ70H1D4SJ3 meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 700 V
- Current - Continuous Drain (Id) @ 25°C: 6.1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 273 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 78W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-251 (Type TH)
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
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