DMC1018UPDWQ-13
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 8V~24V POWERDI5060
$0.28
Available to order
Reference Price (USD)
1+
$0.28471
500+
$0.2818629
1000+
$0.2790158
1500+
$0.2761687
2000+
$0.2733216
2500+
$0.2704745
Exquisite packaging
Discount
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Discover high-performance DMC1018UPDWQ-13 from Diodes Incorporated, a leading solution in the Discrete Semiconductor Products category for Transistors - FETs, MOSFETs - Arrays. These components are designed for efficiency and reliability, making them ideal for various electronic applications. Features include low power consumption, high switching speed, and excellent thermal stability. Perfect for power management, amplification, and switching circuits. Contact us today for a quote and let Diodes Incorporated s DMC1018UPDWQ-13 enhance your projects with superior quality and performance.
Specifications
- Product Status: Active
- FET Type: N and P-Channel Complementary
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 12V, 20V
- Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 31.3A (Ta), 6.7A (Ta), 20.9A (Tc)
- Rds On (Max) @ Id, Vgs: 17mOhm @ 11.8A, 4.5V, 38mOhm @ 8.9A, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 30.4nC @ 8V, 19nC @ 8V
- Input Capacitance (Ciss) (Max) @ Vds: 1525pF @ 6V, 866pF @ 6V
- Power - Max: 2.6W (Ta), 25W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerTDFN
- Supplier Device Package: PowerDI5060-8 (Type UXD)
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