DMT2005UDV-7
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 8V-24V POWERDI3333
$0.25
Available to order
Reference Price (USD)
2,000+
$0.26785
Exquisite packaging
Discount
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The DMT2005UDV-7 from Diodes Incorporated is a top choice in the Discrete Semiconductor Products category, particularly for Transistors - FETs, MOSFETs - Arrays. With features like high breakdown voltage, low gate drive, and excellent thermal performance, these components are ideal for power electronics and high-frequency applications. Whether for consumer electronics or industrial machinery, DMT2005UDV-7 delivers consistent quality. Contact us now to learn more and secure your supply of Diodes Incorporated s premium semiconductors.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 24V
- Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
- Rds On (Max) @ Id, Vgs: 7mOhm @ 14A, 10V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 46.7nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2060pF @ 10V
- Power - Max: 900mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerVDFN
- Supplier Device Package: PowerDI3333-8 (Type UXC)
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