Shopping cart

Subtotal: $0.00

MSCSM120TLM11CAG

Microchip Technology
MSCSM120TLM11CAG Preview
Microchip Technology
PM-MOSFET-SIC-SBD-SP6C
$854.18
Available to order
Reference Price (USD)
1+
$854.18000
500+
$845.6382
1000+
$837.0964
1500+
$828.5546
2000+
$820.0128
2500+
$811.471
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • FET Type: 4 N-Channel (Three Level Inverter)
  • FET Feature: Silicon Carbide (SiC)
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 251A (Tc)
  • Rds On (Max) @ Id, Vgs: 10.4mOhm @ 120A, 20V
  • Vgs(th) (Max) @ Id: 2.8V @ 3mA
  • Gate Charge (Qg) (Max) @ Vgs: 696nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 1000V
  • Power - Max: 1042W (Tc)
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: SP6C

Related Products

Microchip Technology

APTM100H46FT3G

Microchip Technology

APTM50AM38SCTG

Diodes Incorporated

DMT2005UDV-7

Microchip Technology

APTC60HM70BT3G

Renesas Electronics America Inc

2SJ356(0)-T2-AZ

Microchip Technology

MSC017SMA120B4

Rohm Semiconductor

SP8K41HZGTB

Diodes Incorporated

DMC3025LNS-7

Microchip Technology

APTM10DSKM19T3G

Top