CSD25213W10
Texas Instruments
Texas Instruments
MOSFET P-CH 20V 1.6A 4DSBGA
$0.49
Available to order
Reference Price (USD)
3,000+
$0.12705
6,000+
$0.11935
15,000+
$0.11165
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your electronic systems with CSD25213W10, a high-quality Transistors - FETs, MOSFETs - Single from Texas Instruments. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, CSD25213W10 provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 47mOhm @ 1A, 4.5V
- Vgs(th) (Max) @ Id: 1.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 2.9 nC @ 4.5 V
- Vgs (Max): -6V
- Input Capacitance (Ciss) (Max) @ Vds: 478 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 4-DSBGA (1x1)
- Package / Case: 4-UFBGA, DSBGA
Related Products
Rohm Semiconductor
RQ3E070BNTB
Vishay Siliconix
SI2347DS-T1-GE3
Sanyo
3LP03M-TL-E
IXYS
IXFT60N65X2HV
Vishay Siliconix
SI7174DP-T1-GE3
Fairchild Semiconductor
IRFW540ATM
Toshiba Semiconductor and Storage
TK11A65W,S5X
Harris Corporation
HUF75329P3
Infineon Technologies
IPB80N04S404ATMA1
IXYS