IXFT60N65X2HV
IXYS
IXYS
MOSFET N-CH 650V 60A TO268HV
$12.54
Available to order
Reference Price (USD)
1+
$9.75000
30+
$7.99500
120+
$7.21500
510+
$6.04500
1,020+
$5.46000
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Boost your electronic applications with IXFT60N65X2HV, a reliable Transistors - FETs, MOSFETs - Single by IXYS. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, IXFT60N65X2HV meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 52mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id: 5V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 780W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-268HV (IXFT)
- Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Related Products
Vishay Siliconix
SI7174DP-T1-GE3
Fairchild Semiconductor
IRFW540ATM
Toshiba Semiconductor and Storage
TK11A65W,S5X
Harris Corporation
HUF75329P3
Infineon Technologies
IPB80N04S404ATMA1
IXYS
IXFK250N10P
onsemi
NTHL040N65S3HF
Vishay Siliconix
IRFR9110TRPBF
Panjit International Inc.
PJQ4443P-AU_R2_000A1
Rohm Semiconductor