IRFW540ATM
Fairchild Semiconductor
Fairchild Semiconductor
MOSFET N-CH 100V 28A D2PAK
$0.63
Available to order
Reference Price (USD)
1+
$0.63000
500+
$0.6237
1000+
$0.6174
1500+
$0.6111
2000+
$0.6048
2500+
$0.5985
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover high-performance IRFW540ATM from Fairchild Semiconductor, a leading solution in the Discrete Semiconductor Products category. Our Transistors - FETs, MOSFETs - Single are designed for efficiency and reliability, making them ideal for various electronic applications. These components feature low on-resistance, fast switching speeds, and excellent thermal performance, ensuring optimal functionality in power management and amplification circuits. Commonly used in automotive, industrial, and consumer electronics, IRFW540ATM delivers consistent performance under demanding conditions. Interested in learning more? Contact us today for a detailed quote and technical support!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 52mOhm @ 14A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 107W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK (TO-263)
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Related Products
Toshiba Semiconductor and Storage
TK11A65W,S5X
Harris Corporation
HUF75329P3
Infineon Technologies
IPB80N04S404ATMA1
IXYS
IXFK250N10P
onsemi
NTHL040N65S3HF
Vishay Siliconix
IRFR9110TRPBF
Panjit International Inc.
PJQ4443P-AU_R2_000A1
Rohm Semiconductor
RMW130N03TB
Fairchild Semiconductor
SFM9110TF
Infineon Technologies