CSD18510Q5BT
Texas Instruments
Texas Instruments
MOSFET N-CH 40V 300A 8VSON
$2.87
Available to order
Reference Price (USD)
250+
$1.56200
500+
$1.36676
750+
$1.23399
1,250+
$1.13245
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose CSD18510Q5BT by Texas Instruments. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with CSD18510Q5BT inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 0.96mOhm @ 32A, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 153 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 11400 pF @ 20 V
- FET Feature: -
- Power Dissipation (Max): 156W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-VSON-CLIP (5x6)
- Package / Case: 8-PowerTDFN
Related Products
Harris Corporation
IRFU110
Vishay Siliconix
SI2338DS-T1-GE3
Fairchild Semiconductor
FDP6030BL
onsemi
NTMFS4C08NT3G
Infineon Technologies
IPA60R165CPXKSA1
Rohm Semiconductor
R6015ENJTL
Nexperia USA Inc.
PMXB43UNEZ
onsemi
NTS4001NT3G
Rectron USA
RM130N200T2
onsemi