C3M0120065D
Wolfspeed, Inc.
Wolfspeed, Inc.
650V 120M SIC MOSFET
$8.47
Available to order
Reference Price (USD)
1+
$8.47000
500+
$8.3853
1000+
$8.3006
1500+
$8.2159
2000+
$8.1312
2500+
$8.0465
Exquisite packaging
Discount
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Discover high-performance C3M0120065D from Wolfspeed, Inc., a leading solution in the Discrete Semiconductor Products category. Our Transistors - FETs, MOSFETs - Single are designed for efficiency and reliability, making them ideal for various electronic applications. These components feature low on-resistance, fast switching speeds, and excellent thermal performance, ensuring optimal functionality in power management and amplification circuits. Commonly used in automotive, industrial, and consumer electronics, C3M0120065D delivers consistent performance under demanding conditions. Interested in learning more? Contact us today for a detailed quote and technical support!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V
- Rds On (Max) @ Id, Vgs: 157mOhm @ 6.76A, 15V
- Vgs(th) (Max) @ Id: 3.6V @ 1.86mA
- Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 15 V
- Vgs (Max): +19V, -8V
- Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 98W (Tc)
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-3
- Package / Case: TO-247-3
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