SSM3J56ACT,L3F
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET P-CH 20V 1.4A CST3
$0.41
Available to order
Reference Price (USD)
10,000+
$0.07130
30,000+
$0.06670
50,000+
$0.06440
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover SSM3J56ACT,L3F, a versatile Transistors - FETs, MOSFETs - Single solution from Toshiba Semiconductor and Storage, a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
- Rds On (Max) @ Id, Vgs: 390mOhm @ 800mA, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 4.5 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 500mW (Ta)
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Supplier Device Package: CST3
- Package / Case: SC-101, SOT-883
Related Products
Infineon Technologies
BSC0500NSIATMA1
Infineon Technologies
AUIRFR5305TR
Infineon Technologies
IPD050N03LGATMA1
Renesas Electronics America Inc
UPA2807T1L-E1-AT
Diodes Incorporated
ZVP2106GTA
Diodes Incorporated
DMP2021UFDF-7
Micro Commercial Co
SIL05N06-TP
Nexperia USA Inc.
PMPB15XN,115
Infineon Technologies
IPA60R120C7XKSA1
Rohm Semiconductor