TP65H070LDG
Transphorm
Transphorm
GANFET N-CH 650V 25A 3PQFN
$13.74
Available to order
Reference Price (USD)
1+
$13.74000
500+
$13.6026
1000+
$13.4652
1500+
$13.3278
2000+
$13.1904
2500+
$13.053
Exquisite packaging
Discount
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose TP65H070LDG by Transphorm. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with TP65H070LDG inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: GaNFET (Cascode Gallium Nitride FET)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 85mOhm @ 16A, 10V
- Vgs(th) (Max) @ Id: 4.8V @ 700µA
- Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 96W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 3-PQFN (8x8)
- Package / Case: 3-PowerDFN
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