BYM12-200HE3_A/H
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 1A DO213AB
$0.14
Available to order
Reference Price (USD)
9,000+
$0.12865
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your electronic designs with Vishay General Semiconductor - Diodes Division's BYM12-200HE3_A/H Single Rectifier Diodes, engineered for precision and durability. Perfect for rectification circuits, these diodes offer fast switching, high efficiency, and minimal power loss. Applications span across automotive systems, renewable energy solutions, and telecommunications. Key features include high temperature tolerance, low leakage current, and superior surge protection. Trust Vishay General Semiconductor - Diodes Division for components that meet the highest industry standards. Ready to order? Submit your inquiry now!
Specifications
- Product Status: Active
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 200 V
- Capacitance @ Vr, F: 20pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-213AB, MELF (Glass)
- Supplier Device Package: DO-213AB
- Operating Temperature - Junction: -65°C ~ 175°C
Related Products
Microchip Technology
JAN1N6843CCU3
Vishay General Semiconductor - Diodes Division
RGL41KHE3_A/I
Comchip Technology
CDBMTS2150-HF
Microchip Technology
UES1002SM
Toshiba Semiconductor and Storage
CRS10I30C(TE85L,QM
Microchip Technology
S3130
Microchip Technology
1N2133
Rohm Semiconductor
RB168MM200TFTR
Microchip Technology
1N459AUR
Vishay General Semiconductor - Diodes Division