BYG10KHE3_A/H
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE AVALANCHE 800V 1.5A DO214
$0.14
Available to order
Reference Price (USD)
7,200+
$0.15130
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your electronic designs with Vishay General Semiconductor - Diodes Division's BYG10KHE3_A/H Single Rectifier Diodes, engineered for precision and durability. Perfect for rectification circuits, these diodes offer fast switching, high efficiency, and minimal power loss. Applications span across automotive systems, renewable energy solutions, and telecommunications. Key features include high temperature tolerance, low leakage current, and superior surge protection. Trust Vishay General Semiconductor - Diodes Division for components that meet the highest industry standards. Ready to order? Submit your inquiry now!
Specifications
- Product Status: Active
- Diode Type: Avalanche
- Voltage - DC Reverse (Vr) (Max): 800 V
- Current - Average Rectified (Io): 1.5A
- Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 4 µs
- Current - Reverse Leakage @ Vr: 1 µA @ 800 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AC, SMA
- Supplier Device Package: DO-214AC (SMA)
- Operating Temperature - Junction: -55°C ~ 150°C
Related Products
Vishay General Semiconductor - Diodes Division
AR1FD-M3/H
IXYS
E2400EC45E
Sanken
EU 2ZV1
GeneSiC Semiconductor
MURH10010R
Renesas Electronics America Inc
RKP403KS#P1
Microchip Technology
S4360C
Microchip Technology
R37100
Vishay General Semiconductor - Diodes Division
VS-45LR60
Microchip Technology
1N4254
Comchip Technology