RGL41KHE3_A/I
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 800V 1A DO213AB
$0.18
Available to order
Reference Price (USD)
10,000+
$0.15400
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Maximize efficiency with Vishay General Semiconductor - Diodes Division's RGL41KHE3_A/I Single Rectifier Diodes, the go-to choice for professionals seeking reliable power rectification. Suitable for high-frequency applications, these diodes provide fast recovery times and low conduction losses. Commonly used in switch-mode power supplies, welding equipment, and battery chargers, they are built to withstand harsh environments. Features include high surge current ratings and robust packaging. Don't miss out request a sample or quote today!
Specifications
- Product Status: Active
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 800 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 500 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 800 V
- Capacitance @ Vr, F: 15pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-213AB, MELF (Glass)
- Supplier Device Package: DO-213AB
- Operating Temperature - Junction: -65°C ~ 175°C
Related Products
Comchip Technology
CDBMTS2150-HF
Microchip Technology
UES1002SM
Toshiba Semiconductor and Storage
CRS10I30C(TE85L,QM
Microchip Technology
S3130
Microchip Technology
1N2133
Rohm Semiconductor
RB168MM200TFTR
Microchip Technology
1N459AUR
Vishay General Semiconductor - Diodes Division
BYG10KHE3_A/H
Vishay General Semiconductor - Diodes Division
AR1FD-M3/H
IXYS