BUK962R1-40E,118
NXP USA Inc.
NXP USA Inc.
MOSFET N-CH 40V 120A D2PAK
$0.92
Available to order
Reference Price (USD)
1+
$0.92000
500+
$0.9108
1000+
$0.9016
1500+
$0.8924
2000+
$0.8832
2500+
$0.874
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your circuit performance with BUK962R1-40E,118, a premium Transistors - FETs, MOSFETs - Single from NXP USA Inc.. As part of the Discrete Semiconductor Products lineup, this MOSFET excels in delivering high-speed switching and low power consumption. Its advanced design reduces heat generation and improves efficiency, suitable for power supplies, motor controls, and LED lighting. Trust BUK962R1-40E,118 for consistent quality and long-lasting performance. For bulk orders or custom specifications, reach out to our sales team today!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Rds On (Max) @ Id, Vgs: 1.8mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id: 2.1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 87.8 nC @ 5 V
- Vgs (Max): ±10V
- Input Capacitance (Ciss) (Max) @ Vds: 13160 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 293W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Related Products
Infineon Technologies
IPD025N06NATMA1
Vishay Siliconix
IRLI520GPBF
Vishay Siliconix
SIHP15N50E-BE3
Infineon Technologies
IRFZ46NSTRLPBF
Panjit International Inc.
PJE8402_R1_00001
Vishay Siliconix
SI1480DH-T1-GE3
Nexperia USA Inc.
NX3020NAK,215
Rectron USA
RM830
Texas Instruments
CSD18541F5T
Panjit International Inc.