IPD025N06NATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 60V 90A TO252-3
$3.05
Available to order
Reference Price (USD)
2,500+
$1.16944
5,000+
$1.12613
Exquisite packaging
Discount
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IPD025N06NATMA1 by Infineon Technologies is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, IPD025N06NATMA1 ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 2.5mOhm @ 90A, 10V
- Vgs(th) (Max) @ Id: 2.8V @ 95µA
- Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 3W (Ta), 167W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO252-3
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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