SIJA22DP-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 25V 64A/201A PPAK
$1.45
Available to order
Reference Price (USD)
1+
$1.45000
500+
$1.4355
1000+
$1.421
1500+
$1.4065
2000+
$1.392
2500+
$1.3775
Exquisite packaging
Discount
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Optimize your electronic systems with SIJA22DP-T1-GE3, a high-quality Transistors - FETs, MOSFETs - Single from Vishay Siliconix. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, SIJA22DP-T1-GE3 provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25 V
- Current - Continuous Drain (Id) @ 25°C: 64A (Ta), 201A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 0.74mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
- Vgs (Max): +20V, -16V
- Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 4.8W (Ta), 48W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® SO-8
- Package / Case: PowerPAK® SO-8
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