NTD4963NT4G
onsemi
onsemi
MOSFET N-CH 30V 8.1A/44A DPAK
$0.16
Available to order
Reference Price (USD)
1+
$0.16000
500+
$0.1584
1000+
$0.1568
1500+
$0.1552
2000+
$0.1536
2500+
$0.152
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
onsemi presents NTD4963NT4G, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, NTD4963NT4G delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 8.1A (Ta), 44A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 9.6mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 16.2 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1035 pF @ 12 V
- FET Feature: -
- Power Dissipation (Max): 1.1W (Ta), 35.7W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
Microchip Technology
APT14F100B
onsemi
NTA4001NT1
STMicroelectronics
STL19N60M2
Infineon Technologies
IRFB4137PBF
Vishay Siliconix
SI1012R-T1-GE3
Infineon Technologies
IPD65R950C6ATMA1
Vishay Siliconix
SI7423DN-T1-E3
Toshiba Semiconductor and Storage
XPW4R10ANB,L1XHQ
Fairchild Semiconductor
FQP9N25
Infineon Technologies