Shopping cart

Subtotal: $0.00

BUK625R2-30C,118

Nexperia USA Inc.
BUK625R2-30C,118 Preview
Nexperia USA Inc.
MOSFET N-CH 30V 90A DPAK
$0.31
Available to order
Reference Price (USD)
1+
$0.31000
500+
$0.3069
1000+
$0.3038
1500+
$0.3007
2000+
$0.2976
2500+
$0.2945
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Obsolete
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 5.2mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id: 2.8V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 54.8 nC @ 10 V
  • Vgs (Max): ±16V
  • Input Capacitance (Ciss) (Max) @ Vds: 3470 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 128W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

Related Products

Taiwan Semiconductor Corporation

TSM056NH04CV RGG

Toshiba Semiconductor and Storage

TJ50S06M3L(T6L1,NQ

Nexperia USA Inc.

PHB47NQ10T,118

Harris Corporation

RF1S50N06

Panjit International Inc.

PJQ5474A_R2_00001

Infineon Technologies

SPA04N80C3XKSA1

Rohm Semiconductor

R6018JNXC7G

Top