R6018JNXC7G
Rohm Semiconductor
Rohm Semiconductor
MOSFET N-CH 600V 18A TO220FM
$5.31
Available to order
Reference Price (USD)
1+
$5.31000
500+
$5.2569
1000+
$5.2038
1500+
$5.1507
2000+
$5.0976
2500+
$5.0445
Exquisite packaging
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Upgrade your electronic designs with R6018JNXC7G by Rohm Semiconductor, a top-tier choice in Discrete Semiconductor Products. Specifically crafted for Transistors - FETs, MOSFETs - Single applications, this product offers superior power handling and energy efficiency. Key features include high voltage tolerance, minimal power loss, and robust durability, making it perfect for switching and amplification tasks. Whether for industrial machinery, renewable energy systems, or portable devices, R6018JNXC7G ensures reliable operation. Ready to integrate this component into your project? Submit an inquiry now for pricing and availability!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V
- Rds On (Max) @ Id, Vgs: 286mOhm @ 9A, 15V
- Vgs(th) (Max) @ Id: 7V @ 4.2mA
- Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 15 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 72W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220FM
- Package / Case: TO-220-3 Full Pack
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