BSS123-G
onsemi
onsemi
FET 100V 6.0 MOHM SOT23
$0.12
Available to order
Reference Price (USD)
1+
$0.11797
500+
$0.1167903
1000+
$0.1156106
1500+
$0.1144309
2000+
$0.1132512
2500+
$0.1120715
Exquisite packaging
Discount
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BSS123-G by onsemi is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, BSS123-G ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V
- Vgs(th) (Max) @ Id: 2V @ 34µA
- Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 73 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 360mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
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