NVD4806NT4G-VF01
onsemi
onsemi
NVD4806 - SINGLE N-CHANNEL POWER
$0.37
Available to order
Reference Price (USD)
1+
$0.37000
500+
$0.3663
1000+
$0.3626
1500+
$0.3589
2000+
$0.3552
2500+
$0.3515
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your circuit performance with NVD4806NT4G-VF01, a premium Transistors - FETs, MOSFETs - Single from onsemi. As part of the Discrete Semiconductor Products lineup, this MOSFET excels in delivering high-speed switching and low power consumption. Its advanced design reduces heat generation and improves efficiency, suitable for power supplies, motor controls, and LED lighting. Trust NVD4806NT4G-VF01 for consistent quality and long-lasting performance. For bulk orders or custom specifications, reach out to our sales team today!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 11.3A (Ta), 79A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
- Rds On (Max) @ Id, Vgs: 6mOhm @ 30A, 11.5V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 11.5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2142 pF @ 12 V
- FET Feature: -
- Power Dissipation (Max): 1.4W (Ta), 68W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK-3
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
Vishay Siliconix
SIRA12DP-T1-GE3
onsemi
NTTFS5C670NLTWG
NXP USA Inc.
BUK9E8R5-40E,127
Vishay Siliconix
SQM40N10-30_GE3
Toshiba Semiconductor and Storage
TK40A10N1,S4X
Nexperia USA Inc.
PSMN057-200B,118
Vishay Siliconix
SI4168DY-T1-GE3
onsemi
FDMS86101DC
Rohm Semiconductor
RD3P050SNTL1
Microchip Technology