BSP88H6327XTSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 240V 350MA SOT223-4
$0.71
Available to order
Reference Price (USD)
1,000+
$0.25956
2,000+
$0.23877
5,000+
$0.22491
10,000+
$0.21105
25,000+
$0.20135
50,000+
$0.20034
Exquisite packaging
Discount
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Boost your electronic applications with BSP88H6327XTSA1, a reliable Transistors - FETs, MOSFETs - Single by Infineon Technologies. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, BSP88H6327XTSA1 meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 240 V
- Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V
- Rds On (Max) @ Id, Vgs: 6Ohm @ 350mA, 10V
- Vgs(th) (Max) @ Id: 1.4V @ 108µA
- Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 95 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 1.8W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-SOT223-4
- Package / Case: TO-261-4, TO-261AA
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Infineon Technologies