BSM400D12P2G003
Rohm Semiconductor
Rohm Semiconductor
SILICON CARBIDE POWER MODULE. B
$2,571.43
Available to order
Reference Price (USD)
1+
$2571.43000
500+
$2545.7157
1000+
$2520.0014
1500+
$2494.2871
2000+
$2468.5728
2500+
$2442.8585
Exquisite packaging
Discount
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The BSM400D12P2G003 from Rohm Semiconductor is a premium option in the Discrete Semiconductor Products category, specializing in Transistors - FETs, MOSFETs - Arrays. With advanced features such as high-frequency operation, low leakage current, and excellent ESD protection, these components are perfect for demanding electronic applications. Whether you re working on telecommunications, computing, or medical devices, BSM400D12P2G003 offers the reliability you need. Contact us now to discuss how we can support your project requirements with Rohm Semiconductor s cutting-edge solutions.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Half Bridge)
- FET Feature: Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 400A (Tc)
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: 4V @ 85mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 38000pF @ 10V
- Power - Max: 2450W (Tc)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: -
- Package / Case: Module
- Supplier Device Package: Module
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