DMNH6021SPDW-13
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 41V-60V POWERDI506
$0.64
Available to order
Reference Price (USD)
1+
$0.64295
500+
$0.6365205
1000+
$0.630091
1500+
$0.6236615
2000+
$0.617232
2500+
$0.6108025
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your electronic circuits with Diodes Incorporated s DMNH6021SPDW-13, a key player in the Discrete Semiconductor Products category for Transistors - FETs, MOSFETs - Arrays. These components are celebrated for their high efficiency, compact design, and long-lasting performance. Key features include fast switching, low threshold voltage, and superior thermal conductivity. Ideal for applications in power converters, RF amplifiers, and battery management systems. Reach out to us today to explore how DMNH6021SPDW-13 can elevate your design and operational efficiency.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta), 32A(Tc)
- Rds On (Max) @ Id, Vgs: 25mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 20.1nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1143pF @ 25V
- Power - Max: 1.5W (Ta)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount, Wettable Flank
- Package / Case: 8-PowerTDFN
- Supplier Device Package: PowerDI5060-8 (Type R)
Related Products
Infineon Technologies
IRFI4212H-117PXKMA1
onsemi
NVMFD030N06CT1G
Rohm Semiconductor
HS8MA2TCR1
onsemi
NVMFD5C668NLWFT1G
onsemi
FSS248-TL-E
Rohm Semiconductor
BSM400D12P3G002
Diodes Incorporated
DMNH6021SPD-13
onsemi
EFC2J004NUZTDG
Fairchild Semiconductor
FQPF9N25CRDTU
Microchip Technology