HS8MA2TCR1
Rohm Semiconductor
Rohm Semiconductor
30V DUAL COMMON DRAIN PCH+NCH PO
$1.11
Available to order
Reference Price (USD)
1+
$1.11000
500+
$1.0989
1000+
$1.0878
1500+
$1.0767
2000+
$1.0656
2500+
$1.0545
Exquisite packaging
Discount
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The HS8MA2TCR1 from Rohm Semiconductor is a top choice in the Discrete Semiconductor Products category, particularly for Transistors - FETs, MOSFETs - Arrays. With features like high breakdown voltage, low gate drive, and excellent thermal performance, these components are ideal for power electronics and high-frequency applications. Whether for consumer electronics or industrial machinery, HS8MA2TCR1 delivers consistent quality. Contact us now to learn more and secure your supply of Rohm Semiconductor s premium semiconductors.
Specifications
- Product Status: Active
- FET Type: N and P-Channel
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 7A (Ta)
- Rds On (Max) @ Id, Vgs: 80mOhm @ 5.5A, 10V, 35mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 10V, 8.4nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 10V, 365pF @ 10V
- Power - Max: 2W (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerWDFN
- Supplier Device Package: DFN3333-9DC