BSF110N06NT3GXUMA1
Infineon Technologies
Infineon Technologies
N-CHANNEL POWER MOSFET
$0.43
Available to order
Reference Price (USD)
1+
$0.43000
500+
$0.4257
1000+
$0.4214
1500+
$0.4171
2000+
$0.4128
2500+
$0.4085
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose BSF110N06NT3GXUMA1 by Infineon Technologies. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with BSF110N06NT3GXUMA1 inquire now for more details!
Specifications
- Product Status: Active
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): -
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
Related Products
Renesas
2SK3435-AZ
Harris Corporation
IRF831
onsemi
NVMFS6H864NLWFT1G
Diodes Incorporated
DMT10H052LFDF-13
Infineon Technologies
BSP135IXTSA1
NXP USA Inc.
NX2020P1115
Vishay Siliconix
SQR40030ER_GE3
Renesas Electronics America Inc
RJK2017DPE-WS#J3
IXYS
IXFQ8N85X
Vishay Siliconix