BSP135IXTSA1
Infineon Technologies
Infineon Technologies
SMALL SIGNAL MOSFETS PG-SOT223-4
$1.18
Available to order
Reference Price (USD)
1+
$1.18000
500+
$1.1682
1000+
$1.1564
1500+
$1.1446
2000+
$1.1328
2500+
$1.121
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover high-performance BSP135IXTSA1 from Infineon Technologies, a leading solution in the Discrete Semiconductor Products category. Our Transistors - FETs, MOSFETs - Single are designed for efficiency and reliability, making them ideal for various electronic applications. These components feature low on-resistance, fast switching speeds, and excellent thermal performance, ensuring optimal functionality in power management and amplification circuits. Commonly used in automotive, industrial, and consumer electronics, BSP135IXTSA1 delivers consistent performance under demanding conditions. Interested in learning more? Contact us today for a detailed quote and technical support!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 120mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
- Rds On (Max) @ Id, Vgs: 45Ohm @ 120mA, 10V
- Vgs(th) (Max) @ Id: 1V @ 94µA
- Gate Charge (Qg) (Max) @ Vgs: 3.7 nC @ 5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 98 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 1.8W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-SOT223-4
- Package / Case: TO-261-4, TO-261AA
Related Products
NXP USA Inc.
NX2020P1115
Vishay Siliconix
SQR40030ER_GE3
Renesas Electronics America Inc
RJK2017DPE-WS#J3
IXYS
IXFQ8N85X
Vishay Siliconix
IRFR220TRPBF-BE3
Infineon Technologies
IPTG018N10NM5ATMA1
onsemi
NVMYS003N08LHTWG
Infineon Technologies
IPF049N10NF2SATMA1
Wolfspeed, Inc.
C3M0075120D-A
Diodes Incorporated