NVMFS6H864NLWFT1G
onsemi
onsemi
MOSFET N-CH 80V 7A/22A 5DFN
$0.61
Available to order
Reference Price (USD)
1+
$0.60819
500+
$0.6021081
1000+
$0.5960262
1500+
$0.5899443
2000+
$0.5838624
2500+
$0.5777805
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Boost your electronic applications with NVMFS6H864NLWFT1G, a reliable Transistors - FETs, MOSFETs - Single by onsemi. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, NVMFS6H864NLWFT1G meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 22A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id: 2V @ 20µA
- Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 431 pF @ 40 V
- FET Feature: -
- Power Dissipation (Max): 3.5W (Ta), 33W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount, Wettable Flank
- Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
- Package / Case: 8-PowerTDFN, 5 Leads
Related Products
Diodes Incorporated
DMT10H052LFDF-13
Infineon Technologies
BSP135IXTSA1
NXP USA Inc.
NX2020P1115
Vishay Siliconix
SQR40030ER_GE3
Renesas Electronics America Inc
RJK2017DPE-WS#J3
IXYS
IXFQ8N85X
Vishay Siliconix
IRFR220TRPBF-BE3
Infineon Technologies
IPTG018N10NM5ATMA1
onsemi
NVMYS003N08LHTWG
Infineon Technologies