BSC160N15NS5ATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 150V 56A TDSON
$3.30
Available to order
Reference Price (USD)
5,000+
$1.09710
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
BSC160N15NS5ATMA1 by Infineon Technologies is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, BSC160N15NS5ATMA1 ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150 V
- Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
- Rds On (Max) @ Id, Vgs: 16mOhm @ 28A, 10V
- Vgs(th) (Max) @ Id: 4.6V @ 60µA
- Gate Charge (Qg) (Max) @ Vgs: 23.1 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1820 pF @ 75 V
- FET Feature: -
- Power Dissipation (Max): 96W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TDSON-8-7
- Package / Case: 8-PowerTDFN
Related Products
Vishay Siliconix
SI4116DY-T1-E3
Diodes Incorporated
DMN67D8LW-13
Vishay Siliconix
SI3493DDV-T1-GE3
Diodes Incorporated
DMT3006LDK-7
Rohm Semiconductor
R6030JNZ4C13
Texas Instruments
CSD25304W1015
IXYS
IXTP230N04T4
Infineon Technologies
IRFB4310PBF
STMicroelectronics
STW24NM60N
onsemi