CSD25304W1015
Texas Instruments
Texas Instruments
MOSFET P-CH 20V 3A 6DSBGA
$0.21
Available to order
Reference Price (USD)
1+
$0.20631
500+
$0.2042469
1000+
$0.2021838
1500+
$0.2001207
2000+
$0.1980576
2500+
$0.1959945
Exquisite packaging
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Discover CSD25304W1015, a versatile Transistors - FETs, MOSFETs - Single solution from Texas Instruments, a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs: 32.5mOhm @ 1.5A, 4.5V
- Vgs(th) (Max) @ Id: 1.15V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 4.4 nC @ 4.5 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 595 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 750mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-DSBGA (1x1.5)
- Package / Case: 6-UFBGA, DSBGA
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