R6030JNZ4C13
Rohm Semiconductor
Rohm Semiconductor
MOSFET N-CH 600V 30A TO247G
$11.49
Available to order
Reference Price (USD)
1+
$11.49000
500+
$11.3751
1000+
$11.2602
1500+
$11.1453
2000+
$11.0304
2500+
$10.9155
Exquisite packaging
Discount
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Boost your electronic applications with R6030JNZ4C13, a reliable Transistors - FETs, MOSFETs - Single by Rohm Semiconductor. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, R6030JNZ4C13 meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V
- Rds On (Max) @ Id, Vgs: 143mOhm @ 15A, 15V
- Vgs(th) (Max) @ Id: 7V @ 5.5mA
- Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 15 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 370W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247G
- Package / Case: TO-247-3
