BF1201R,215
NXP USA Inc.
NXP USA Inc.
MOSFET 2N-CH 10V 30MA SOT143R
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The BF1201R,215 by NXP USA Inc. redefines reliability in RF power transistors. Boasting high breakdown voltage and superior gain bandwidth, these MOSFETs are indispensable in medical imaging and industrial heating systems. Their design prioritizes energy efficiency without sacrificing power. Interested? Send us your requirements and we ll provide customized solutions!
Specifications
- Product Status: Obsolete
- Transistor Type: N-Channel Dual Gate
- Frequency: 400MHz
- Gain: 29dB
- Voltage - Test: 5 V
- Current Rating (Amps): 30mA
- Noise Figure: 1dB
- Current - Test: 15 mA
- Power - Output: -
- Voltage - Rated: 10 V
- Package / Case: SOT-143R
- Supplier Device Package: SOT-143R
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