NE3514S02-T1C-A
CEL
CEL
HJ-FET NCH 10DB S02
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The NE3514S02-T1C-A by CEL redefines reliability in RF power transistors. Boasting high breakdown voltage and superior gain bandwidth, these MOSFETs are indispensable in medical imaging and industrial heating systems. Their design prioritizes energy efficiency without sacrificing power. Interested? Send us your requirements and we ll provide customized solutions!
Specifications
- Product Status: Obsolete
- Transistor Type: HFET
- Frequency: 20GHz
- Gain: 10dB
- Voltage - Test: 2 V
- Current Rating (Amps): 70mA
- Noise Figure: 0.75dB
- Current - Test: 10 mA
- Power - Output: -
- Voltage - Rated: 4 V
- Package / Case: 4-SMD, Flat Leads
- Supplier Device Package: S02
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