MRF7S21210HSR3
NXP USA Inc.
NXP USA Inc.
FET RF 65V 2.17GHZ NI-780S
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
For mission-critical RF amplification, choose NXP USA Inc.'s MRF7S21210HSR3 MOSFETs. Combining silicon carbide (SiC) robustness with precision matching networks, they outperform in avionics and marine navigation systems. Extended lifecycle ratings reduce total cost of ownership. Your perfect component awaits click inquire to connect with our technical specialists!
Specifications
- Product Status: Obsolete
- Transistor Type: LDMOS
- Frequency: 2.17GHz
- Gain: 18.5dB
- Voltage - Test: 28 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 1.4 A
- Power - Output: 63W
- Voltage - Rated: 65 V
- Package / Case: NI-780S
- Supplier Device Package: NI-780S
Related Products
NXP USA Inc.
BLC8G24LS-240AVJ
STMicroelectronics
SD3932
NXP USA Inc.
ON5214,118
STMicroelectronics
LET9045
CEL
NE3514S02-T1C-A
NXP USA Inc.
MRF6VP121KHSR6
Infineon Technologies
BF2030E6814HTSA1
Infineon Technologies
PTFA071701EV4XWSA1
NXP USA Inc.
MMRF1311HR5
Ampleon USA Inc.